Electron scattering and conduction on various types of impurities in semiconductor can be calculated via the first order Born approximation when the electrons are considered as free particles described by plane waves. In the following we present analytic angular differential cross section formula for electromagnetic radiation field assisted electron scattering on impurities approximated with various model potentials in semiconductors. The main idea describes the scattering electrons with the well-known Volkov wave function which automatically incorporates electron dynamics induced by the external oscillating filed. This description is well-known for strong laser fields from half a century. The calculated electron conductance in the semiconductor could be enhanced with an order of magnitude if an infrared electromagnetic field is present with I = 1014 W/cm2 intensity, which for instance will be achievable in the ELI-ALPS facility in the near future.