Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET). In this seminar, we present a novel zigzag GNR device concept, enabling the control of both charge and spin signals, integrated within the simplest three-terminal device configuration. Using an experimentally validated theoretical model [1], we show that the applied gate voltage can dynamically open and close an interaction gap due to the strong interplay between the band structure and edge spin configuration. These transistors can switch at low voltages and high speed up to 50% spin polarization of the current by using the same back gate electrode [2]. Besides the graphene, in this seminar we will also discuss the edge spin properties of molybdenum disulfide (MoS2) another two-dimensional material.

[1] G. Zs. Magda, X. Jin, I. Hagymási et al., Nature 514, 608-611 (2014)
[2] P. Vancsó, I. Hagymási, L. Tapasztó, 2D Materials 4, 024008 (2017)