Controllable, partially isolated few level systems in semiconductors have recently gained multidisciplinary attention due to their widespread nanoscale sensing and quantum technology applications. Quantitative simulation of the dynamics and related applications of such systems is a challenging theoretical task that requires faithful description not only of the few-level systems but also of the local environment. I will report on a method that can describe relevant relaxation processes induced by a dilute bath of nuclear and electron spins. The method utilizes an extended Lindblad equation in the framework of cluster approximation of a central spin system. Furthermore, I will demonstrate that the proposed method can accurately describe the T1 time of an exemplary solid-state point defect qubit system, the NV center in diamond, at various external fields.
Non-Markovian spin relaxation model applied to point defect qubit systems
Non-Markovian relaxation of spin qubits
2020. 01. 10. 10:15
Building F, stairway III., seminar room of the Dept. of Theoretical Physics
Viktor Ivády (Wigner/Linköping)